Silicon Carbide Crucibles: Thermal Stability in Extreme Processing alumina white

1. Product Scientific Research and Structural Stability

1.1 Crystal Chemistry and Bonding Characteristics

(Silicon Carbide Crucibles)

Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral lattice, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing outstanding atomic bond strength.

The Si– C bond, with a bond energy of around 318 kJ/mol, is among the strongest in architectural ceramics, giving superior thermal security, firmness, and resistance to chemical attack.

This durable covalent network causes a product with a melting factor surpassing 2700 ° C(sublimes), making it among the most refractory non-oxide porcelains available for high-temperature applications.

Unlike oxide porcelains such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels above 1400 ° C, where numerous steels and standard porcelains begin to soften or break down.

Its reduced coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal cycling without tragic splitting, an important characteristic for crucible performance.

These inherent residential properties originate from the well balanced electronegativity and similar atomic sizes of silicon and carbon, which promote an extremely stable and largely packed crystal framework.

1.2 Microstructure and Mechanical Durability

Silicon carbide crucibles are generally produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial role in toughness and thermal shock resistance.

Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperature levels above 2000 ° C, commonly with boron or carbon ingredients to improve densification and grain border communication.

This process generates a fully thick, fine-grained framework with marginal porosity (

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